MONOLITHIC PIN-HEMT AMPLIFIER ON AN INP SUBSTRATE GROWN BY OMVPE FOR LONG-WAVELENGTH FIBER OPTIC COMMUNICATIONS

被引：8

作者：

SASAKI, G

KOIKE, K

KUWATA, N

ONO, K

YOSHIDA, K

机构：

[1] Sumitomo Electric Industries, Japan

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 19期

关键词：

D O I：

10.1049/el:19880816

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1201 / 1202

页数：2

共 3 条

[1] HIGH-SPEED MONOLITHIC GAINAS PINFET [J].

MIURA, S ;

MIKAWA, T ;

FUJII, T ;

WADA, O .

ELECTRONICS LETTERS, 1988, 24 (07) :394-395

[2] PLANAR MONOLITHIC INTEGRATED PHOTORECEIVER FOR 1.3-1.55 MU-M WAVELENGTH APPLICATIONS USING GALNAS-GAAS HETEROEPITAXIES [J].

RAZEGHI, M ;

RAMDANI, J ;

VERRIELE, H ;

DECOSTER, D ;

CONSTANT, M ;

VANBREMEERSCH, J .

APPLIED PHYSICS LETTERS, 1986, 49 (04) :215-217

[3] LONG-WAVELENGTH PINFET RECEIVER OEIC ON A GAAS-ON-INP HETEROSTRUCTURE [J].

SUZUKI, A ;

ITOH, T ;

TERAKADO, T ;

KASAHARA, K ;

ASANO, K ;

INOMOTO, Y ;

ISHIHARA, H ;

TORIKAI, T ;

FUJITA, S .

ELECTRONICS LETTERS, 1987, 23 (18) :954-955

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