INFLUENCE OF CHEMISTRY ON THE ENERGY-BAND STRUCTURE - ALAS VERSUS GAAS

被引：4

作者：

BOGUSLAWSKI, P ^{[1
]}

GORCZYCA, I ^{[1
]}

机构：

[1] POLISH ACAD SCI,HIGH PRESSURE RES CTR,PL-00901 WARSAW,POLAND

来源：

ACTA PHYSICA POLONICA A | 1991年 / 80卷 / 03期

关键词：

D O I：

10.12693/APhysPolA.80.433

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Energy band structure of AlAs and GaAs is analyzed in terms of the energy structure of the constituent atoms. Conduction band wave functions are projected on s-, p-, and d-symmetry atomic orbitals. The resulting information is combined with the eigenergies of Al and Ga atoms, in order to-discuss the character of the band gaps, and the sign of deformation potentials.

引用

页码：433 / 436

页数：4

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