CHARACTERISTICS OF THE (III) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS .3. THE EFFECTS OF SURFACE ACTIVE AGENTS ON INSB AND THE IDENTIFICATION OF ANTIMONY EDGE DISLOCATIONS

被引:21
作者
LAVINE, MC
GATOS, HC
FINN, MC
机构
关键词
D O I
10.1149/1.2427931
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:974 / 980
页数:7
相关论文
共 9 条
[1]   EVIDENCE OF DISLOCATION JOGS IN DEFORMED SILICON [J].
DASH, WC .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (04) :705-709
[2]   ETCHING AND INHIBITION OF THE (III) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS - INSB [J].
GATOS, HC ;
LAVINE, MC .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 :169-&
[3]   CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS [J].
GATOS, HC ;
LAVINE, MC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) :427-433
[4]   ANTIMONY EDGE DISLOCATIONS IN INSB [J].
GATOS, HC ;
LAVINE, MC ;
FINN, MC .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (06) :1174-&
[5]   CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS .2. SURFACE DAMAGE [J].
GATOS, HC ;
LAVINE, MC ;
WAREKOIS, EP .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (07) :645-649
[6]  
GILMAN H, 1948, ORGANIC CHEM, V1, P421
[7]  
HULME KF, 1959, ROYAL RADAR ESTABLIS, P1581
[8]   INFLUENCE OF CRYSTAL ORIENTATION ON THE SURFACE BEHAVIOR OF INSB [J].
LAVINE, MC ;
ROSENBERG, AJ ;
GATOS, HC .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) :1131-1132
[9]   DISLOCATIONS AND SELECTIVE ETCH PITS IN INSB [J].
VENABLES, JD ;
BROUDY, RM .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) :1025-1028