SRTIO3 BUFFER LAYERS AND TUNNEL BARRIERS FOR BA-K-BI-O JUNCTIONS

被引：6

作者：

BAUMERT, BA ^{[1
]}

TALVACCHIO, J ^{[1
]}

FORRESTER, MG ^{[1
]}

机构：

[1] WESTINGHOUSE SCI & TECHNOL CTR,PITTSBURGH,PA 15235

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 17期

关键词：

D O I：

10.1063/1.109451

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial SrTiO3 films were used as buffer layers and tunnel barriers for Ba0.6K0.4BiO3 (BKBO) films and tunnel junctions, respectively. In contrast to BKBO films grown directly on LaAlO3, films grown on SrTiO3 (001) buffer layers on LaAlO3 had a single (001) growth orientation, with T(c)'s of 26 K and DELTAomega = 0.7-degrees. These values are both equal to those obtained for growth on a SrTiO3 Single crystal. A similar improvement was obtained for BKBO grown on SrTiO3-buffered NdGaO3 substrates. Tunnel junctions consisting of BKBO(001)/SrTiO3/BKBO layers had substantial contributions to the gap voltage from both the base and top BKBO electrodes.

引用

页码：2137 / 2139

页数：3

共 10 条

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