P-TYPE PHOTOELECTRIC BEHAVIOR IN CDS DOMINATED BY A HIGH-RESISTIVITY REGION NEAR ANODE

被引：18

作者：

BOER, KW

WARD, JJ

机构：

来源：

PHYSICAL REVIEW | 1967年 / 154卷 / 03期

关键词：

D O I：

10.1103/PhysRev.154.757

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：757 / &

共 26 条

[11] PRECIPITATION OF IMPURITIES IN LARGE SINGLE CRYSTALS OF CDS [J].

DREEBEN, A .

[12]

FRANZ W, 1958, Z NATURFORSCH, VA 13, P484

[13]

FRERICHS R, 1946, NATURWISSENSCHAFTEN, V33, P281

[14]

KELDYSH IV, 1958, SOV PHYS JETP, V6, P788

[15]

KELDYSH IV, 1958, ZH EKSP TEOR FIZ, V34, P1138

KITAMURA, S ;

YAMASHITA, T ;

KUBO, T .

[17] DOUBLE INJECTION IN INSULATORS [J].

LAMPERT, MA .

PHYSICAL REVIEW, 1962, 125 (01) :126-&

[18] DOUBLE-CARRIER INJECTION + NEGATIVE RESISTANCE IN CDS [J].

LITTON, CW ;

REYNOLDS, DC .

PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A) :A536-&

[19]

REYNOLDS DC, 1956, B AM PHYS SOC, V3, P111

[20]

SCHNURER E, 1964, PHYS STATUS SOLIDI, V6, P133