FORMATION OF OHMIC CONTACTS TO N-GAAS BY ION-BEAM MIXING AND ANNEALING

被引：5

作者：

BARNARD, WO

MALHERBE, JB

LACQUET, BM

机构：

[1] UNIV PRETORIA,DEPT PHYS,PRETORIA 0001,SOUTH AFRICA

[2] RAND AFRIKAANS UNIV,MAT LAB,JOHANNESBURG 2000,SOUTH AFRICA

来源：

APPLIED SURFACE SCIENCE | 1988年 / 31卷 / 04期

关键词：

D O I：

10.1016/0169-4332(88)90005-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：437 / 444

页数：8

共 19 条

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[3]

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[7]

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[8]

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[9]

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[10] AUGER STUDIES ON RAPID GRAIN-BOUNDARY DIFFUSION OF GE THROUGH AU [J].

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