ELECTRONIC-STRUCTURE OF INP GA0.47IN0.53AS INTERFACES

被引:32
作者
PERESSI, M [1 ]
BARONI, S [1 ]
BALDERESCHI, A [1 ]
RESTA, R [1 ]
机构
[1] INST ROMAND RECH NUMER PHYS MAT,CH-1015 LAUSANNE,SWITZERLAND
来源
PHYSICAL REVIEW B | 1990年 / 41卷 / 17期
关键词
D O I
10.1103/PhysRevB.41.12106
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic structure of lattice-matched InP/Ga0.47In0.53As heterojunctions has been studied for the three main crystallographic orientations (001), (110), and (111), using state-of-the-art local-density techniques, and treating the GaxIn1-xAs alloy by the virtual-crystal approximation. The valence-band offset does not depend on the crystallographic orientation within our numerical accuracy (10 meV). Our results and, in particular, the orientation independence of the band offset are examined within a linear-response approach in which the interface is treated as a perturbation with respect to an average, periodic crystal. This approach also allows us to describe in a physically sound and quantitatively accurate way the effects of interfacial strain. The effects of disorder-induced and electron-correlation- induced self-energies are also briefly discussed. © 1990 The American Physical Society.
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页码:12106 / 12110
页数:5
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