HOT CARRIER PHOTOLUMINESCENCE FROM STRAINED INXGA1-XAS/GAAS SINGLE QUANTUM WELLS

被引：3

作者：

ANDERSSON, TG ^{[1
]}

CHEN, ZG ^{[1
]}

XU, ZY ^{[1
]}

XU, JZ ^{[1
]}

GE, WK ^{[1
]}

机构：

[1] CHINESE ACAD SCI,INST SEMICOND,BEIJING,PEOPLES R CHINA

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90386-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：215 / 219

页数：5

共 21 条

[1]

ANDERSSON T, UNPUB

[2] PHOTOLUMINESCENCE AND PHOTOCONDUCTIVITY MEASUREMENTS ON BAND-EDGE OFFSETS IN STRAINED MOLECULAR-BEAM-EPITAXY-GROWN INX GA1-XAS/GAAS QUANTUM WELLS [J].

ANDERSSON, TG ;

CHEN, ZG ;

KULAKOVSKII, VD ;

UDDIN, A ;

VALLIN, JT .

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[3] VARIATION OF THE CRITICAL LAYER THICKNESS WITH IN CONTENT IN STRAINED INX GA1-XAS-GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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CHEN, ZG ;

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[4]

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[5]

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[7] OPTICAL INVESTIGATION OF HIGHLY STRAINED INGAAS-GAAS MULTIPLE QUANTUM-WELLS [J].

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[8] LOW-NOISE BEHAVIOR OF INGAAS QUANTUM-WELL-STRUCTURED MODULATION-DOPED FETS FROM 10-2 TO 108 HZ [J].

LIU, SMJ ;

DAS, MB ;

PENG, CK ;

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MORKOC, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) :576-582

[9] CARRIER COOLING IN UNDOPED AND MODULATION-DOPED GA0.47IN0.53AS MULTIPLE QUANTUM-WELLS [J].

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[10] SPECTROSCOPY OF HOT CARRIERS IN SEMICONDUCTORS [J].

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JOURNAL OF LUMINESCENCE, 1986, 35 (03) :121-154

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