STRAINED-LAYER INSB/GASB QUANTUM-WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：24

作者：

QIAN, LQ ^{[1
]}

WESSELS, BW ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 05期

关键词：

D O I：

10.1063/1.109971

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InSb/GaSb quantum well structures have been prepared by atmospheric pressure metalorganic vapor phase epitaxy. Strong sharp photoluminescence emission peaks with a full width at half-maximum of 6-11 meV were obtained for the quantum well structures with well thicknesses of 0.35-0.88 nm, suggesting nearly atomically planar interfaces. The observed photoluminescence transition energies are in excellent agreement with the calculated values using a standard finite square well model taking into account strain. A broadening of the predominant photoluminescence emission peak was observed for quantum well structures with well thicknesses above 1 nm, indicating nonplanar growth.

引用

页码：628 / 630

页数：3

共 18 条

[1] BAND-STRUCTURE ENGINEERING FOR LOW-THRESHOLD HIGH-EFFICIENCY SEMICONDUCTOR-LASERS [J].

ADAMS, AR .

ELECTRONICS LETTERS, 1986, 22 (05) :249-250

[2] GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM-WELL LEDS EMITTING AT 1.6-MU-M [J].

ALAVI, K ;

PEARSALL, TP ;

FORREST, SR ;

CHO, AY .

ELECTRONICS LETTERS, 1983, 19 (06) :227-229

[3] ENERGY BAND-GAP SHIFT WITH ELASTIC STRAIN IN GAXIN1-XP EPITAXIAL LAYERS ON (001) GAAS SUBSTRATES [J].

ASAI, H ;

OE, K .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :2052-2056

[4] SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION [J].

BASTARD, G .

PHYSICAL REVIEW B, 1981, 24 (10) :5693-5697

[5] PHOTOELECTRIC PROPERTIES OF CLEAVED GAAS GASB INAS AND INSB SURFACES - COMPARISON WITH SI AND GE [J].

GOBELI, GW ;

ALLEN, FG .

PHYSICAL REVIEW, 1965, 137 (1A) :A245-&

[6] ELECTRONIC AND OPTICAL-PROPERTIES OF FE-DOPED INP PREPARED BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

HUANG, K ;

WESSELS, BW .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (12) :4342-4344

[7] OPTICAL INVESTIGATION OF HIGHLY STRAINED INGAAS-GAAS MULTIPLE QUANTUM-WELLS [J].

JI, G ;

HUANG, D ;

REDDY, UK ;

HENDERSON, TS ;

HOUDRE, R ;

MORKOC, H .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) :3366-3373

[8] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :118-125

[9] SEMICONDUCTOR QUANTUM-WELL STRUCTURES FOR OPTOELECTRONICS - RECENT ADVANCES AND FUTURE-PROSPECTS [J].

OKAMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1987, 26 (03) :315-330

[10] VALENCE BAND ENGINEERING IN STRAINED-LAYER STRUCTURES [J].

OREILLY, EP .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (03) :121-137

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