Indium-induced layer-by-layer growth and suppression of twin formation in the homoepitaxial growth of Cu(111)

被引：63

作者：

vanderVegt, HA ^{[1
]}

Alvarez, J ^{[1
]}

Torrelles, X ^{[1
]}

Ferrer, S ^{[1
]}

Vlieg, E ^{[1
]}

机构：

[1] EUROPEAN SYNCHROTRON RADIAT FACIL,F-38043 GRENOBLE,FRANCE

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.52.17443

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the effect of In on the homoepitaxial growth of Cu(111) by means of surface x-ray diffraction. At the temperature range investigated (125-300 K), the growth on clean Cu occurs in a three-dimensional mode with the creation of twin crystallites over a small fraction of the total surface area. When the surface is precovered with a submonolayer amount of In, layer-by-layer growth is induced and the formation of twin crystallites is suppressed.

引用

页码：17443 / 17448

页数：6

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