ELECTRONIC STATES FOR THE AL OVERLAYER ON THE SI(111) SURFACE

被引：13

作者：

NISHIDA, M

机构：

[1] Department of Electronics, Kanazawa Institute of Technology

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1979年 / 95卷 / 01期

关键词：

D O I：

10.1002/pssb.2220950130

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Calculations are iteratively carried out for the overlayer of Al chemisorbed on the Si (111) surface using extended Hückel theory. The total, local, and orbital densities of states are presented for threefold‐coordinated substitutional and interstitial site chemisorption geometries. It is found that the electronic structure for Al on the Si(111) surface depends strongly on the chemisorption geometries and that the interstitial site geometry presents better agreements with existing spectroscopic experiments. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：263 / 272

页数：10

共 27 条

[1]

APPELBAUM JA, 1974, PHYSICS SEMICONDUCTO, P681

[2] SPECIAL POINTS IN BRILLOUIN ZONE [J].