PHOSPHORUS VACANCY IN INP - A NEGATIVE-U CENTER

被引：30

作者：

ALATALO, M ^{[1
]}

NIEMINEN, RM ^{[1
]}

PUSKA, MJ ^{[1
]}

SEITSONEN, AP ^{[1
]}

VIRKKUNEN, R ^{[1
]}

机构：

[1] UNIV HELSINKI,THEORET PHYS RES INST,SF-00170 HELSINKI 17,FINLAND

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.47.6381

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using first-principles simulations, we identify the phosphorous vacancy in InP as a negative-U center. The deep levels associated with this defect axe in the upper half of the band gap, and the charge state changes directly from positive to negative as the Fermi level is raised: the vacancy captures two electrons rather than one. We also obtain the relaxed structures and formation energies for the In and P vacancies as a function of both electron and atomic chemical potentials.

引用

页码：6381 / 6384

页数：4

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