TRANSVERSE MAGNETIC FIELD EFFECT ON CARRIER INJECTION INTO GERMANIUM SLICE

[1] EFFECT OF MAGNETIC FIELD ON DENSITY DISTRIBUTION OF INJECTED PLASMA IN SEMICONDUCTOR RODS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (01) : 8 - &

[2] DOUBLE INJECTION IN DEEP-LYING IMPURITY SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 369 - &

[3] THE TRANSISTOR, A SEMI-CONDUCTOR TRIODE [J]. PHYSICAL REVIEW, 1948, 74 (02): : 230 - 231

[4] EFFECTS OF DIFFUSION ON DOUBLE INJECTION IN INSULATORS [J]. PHYSICAL REVIEW, 1965, 137 (1A): : A272 - &

[5] CURRENT-VOLTAGE CHARACTERISTICS OF LARGE DOUBLE INJECTION IN SI P-I-N STRUCTURES ( SPACE CHARGE RECOMBINATION LI COMPENSATION O-25 DEGREES C E/T ) [J]. APPLIED PHYSICS LETTERS, 1964, 4 (04) : 65 - &

[6] TRANSIENT RESPONSE OF DOUBLE INJECTION IN A SEMICONDUCTOR OF FINITE CROSS SECTION [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) : 2614 - &

[7] BRAY R, 1948, PHYS REV, V74, P1218

[8] DEPENDENCE OF RESISTIVITY OF GERMANIUM ON ELECTRIC FIELD [J]. PHYSICAL REVIEW, 1949, 76 (01): : 152 - 153

[9] BRAY R, 1947, PHYS REV, V72, P530

[10] HATOYAMA M, 1960, B ELECTROTECHNICAL L, V24, P30

[1] EFFECT OF MAGNETIC FIELD ON DENSITY DISTRIBUTION OF INJECTED PLASMA IN SEMICONDUCTOR RODS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (01) : 8 - &

[2] DOUBLE INJECTION IN DEEP-LYING IMPURITY SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 369 - &

[3] THE TRANSISTOR, A SEMI-CONDUCTOR TRIODE [J]. PHYSICAL REVIEW, 1948, 74 (02): : 230 - 231

[4] EFFECTS OF DIFFUSION ON DOUBLE INJECTION IN INSULATORS [J]. PHYSICAL REVIEW, 1965, 137 (1A): : A272 - &

[5] CURRENT-VOLTAGE CHARACTERISTICS OF LARGE DOUBLE INJECTION IN SI P-I-N STRUCTURES ( SPACE CHARGE RECOMBINATION LI COMPENSATION O-25 DEGREES C E/T ) [J]. APPLIED PHYSICS LETTERS, 1964, 4 (04) : 65 - &

[6] TRANSIENT RESPONSE OF DOUBLE INJECTION IN A SEMICONDUCTOR OF FINITE CROSS SECTION [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) : 2614 - &

[7] BRAY R, 1948, PHYS REV, V74, P1218

[8] DEPENDENCE OF RESISTIVITY OF GERMANIUM ON ELECTRIC FIELD [J]. PHYSICAL REVIEW, 1949, 76 (01): : 152 - 153

[9] BRAY R, 1947, PHYS REV, V72, P530

[10] HATOYAMA M, 1960, B ELECTROTECHNICAL L, V24, P30