CHARACTERIZATION OF HIGH-PURITY INP BY PHOTOLUMINESCENCE

被引:18
作者
INOUE, T
KAINOSHO, K
HIRANO, R
SHIMAKURA, H
KANAZAWA, T
ODA, O
机构
[1] Electronic Materials and Components Research Laboratories, Nippon Mining Co. Ltd., Toda, Saitama 335, Niizo-Minami
关键词
D O I
10.1063/1.344547
中图分类号
O59 [应用物理学];
学科分类号
摘要
InP polycrystals grown by the HB technique and InP single crystals grown by the liquid-encapsulated Czochralski technique have been evaluated by photoluminescence. It was found that as the carrier concentration is decreased, the photoluminescence spectrum shows finer structures. When the carrier concentration is less than 9×1014 cm -3, a strong free-exciton peak could be observed.
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页码:7165 / 7168
页数:4
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