STUDIES ON THE RECOMBINATION OF ELECTRONS AND HOLES IN GERMANIUM

被引:18
作者
KALASHNIKOV, SG
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D O I
10.1016/0022-3697(59)90273-2
中图分类号
O6 [化学];
学科分类号
0703 ;
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页码:52 / 59
页数:8
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共 36 条
  • [11] THE STATISTICS OF DIVALENT IMPURITY CENTRES IN A SEMICONDUCTOR
    CHAMPNESS, CH
    [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (12): : 1335 - 1339
  • [12] CUBO R, 1955, PROGR THEOR PHYS, V13, P160
  • [13] GLINCHUK KD, 1957, ZH TEKH FIZ, V27, P2451
  • [14] THERMAL IONIZATION AND CAPTURE OF ELECTRONS TRAPPED IN SEMICONDUCTORS
    GUMMEL, H
    LAX, M
    [J]. PHYSICAL REVIEW, 1955, 97 (06): : 1469 - 1470
  • [15] HALL RN, PHYS REV
  • [16] KALASHNIKOV SG, 1957, ZH TEKH FIZ, V27, P1925
  • [17] KALASHNIKOV SG, 1958, ZH TEKH FIZ MOSCOW, V28
  • [18] LANDSBERG EG, 1958, ZH TEKH FIZ MOSCOW, V28
  • [19] A NOTE ON THE THEORY OF SEMICONDUCTORS
    LANDSBERG, PT
    [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1952, 65 (392): : 604 - 608
  • [20] DEFECTS WITH SEVERAL TRAPPING LEVELS IN SEMICONDUCTORS
    LANDSBERG, PT
    [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (10): : 1056 - 1059