INTERPRETATION OF HIGH-FIELD EFFECTS IN CHALCOGENIDE THIN-FILMS

被引：8

作者：

MARSHALL, JM ^{[1
]}

机构：

[1] UNIV EDINBURGH,DEPT ELECT ENGN,EDINBURGH,SCOTLAND

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 05期

关键词：

D O I：

10.1016/0038-1101(73)90163-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：629 / 631

页数：3

共 11 条

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[3]

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[6] CONSIDERATION OF POOLE-FRENKEL EFFECT ON ELECTRIC CONDUCTION IN INSULATORS [J].

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[7] HOLE DRIFT MOBILITY OF VITREOUS SELENIUM [J].

MARSHALL, JM ;

OWEN, AE .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 12 (01) :181-&

[8]

MARSHALL JM, TO BE PUBLISHED

[9]

MOTT NF, 1971, ELECTRONIC PROCESSES

[10] HIGH FIELD EFFECTS IN CHALCOGENIDE THIN-FILMS [J].

STUBB, T ;

SUNTOLA, T ;

TIAINEN, OJA .

SOLID-STATE ELECTRONICS, 1972, 15 (06) :611-&

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