THE MATERIAL STATE OF ION-IMPLANTED CR IN GAAS

被引：6

作者：

PRONKO, PP ^{[1
]}

RAI, AK ^{[1
]}

HOLLAND, OW ^{[1
]}

APPLETON, BR ^{[1
]}

NARAYAN, J ^{[1
]}

机构：

[1] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37830

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 08期

关键词：

D O I：

10.1063/1.331444

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5621 / 5629

页数：9

共 10 条

[1]

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[2]

Chu WK., 1978, BACKSCATTERING SPECT

[3]

HAISTY RW, 1964, 7TH P INT C PHYS SEM, P1161

[4]

KANBER H, 1981, OCT EL SOC M DENV

[5] STOICHIOMETRIC DISTURBANCES IN ION-IMPLANTED GAAS AND REDISTRIBUTION OF CR DURING ANNEALING [J].

MAGEE, TJ ;

KAWAYOSHI, H ;

ORMOND, RD ;

CHRISTEL, LA ;

GIBBONS, JF ;

HOPKINS, CG ;

EVANS, CA ;

DAY, DS .

APPLIED PHYSICS LETTERS, 1981, 39 (11) :906-908

[6]

MAYER JW, 1977, ION BEAM HDB MATERIA

[7]

PRONKO PP, UNPUB

[8]

REES GJ, 1980, SEMIINSULATING III V

[9] AS-IMPLANTED AND REDISTRIBUTED ANNEALED DEPTH DISTRIBUTIONS, RANGE-ENERGY DATA, AND SHAPE FACTORS FOR CR IMPLANTED INTO CRYSTALLINE GAAS AND SI [J].

WILSON, RG .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :3954-3959

[10] CHROMIUM CONCENTRATIONS, DEPTH DISTRIBUTIONS, AND DIFFUSION-COEFFICIENT IN BULK AND EPITAXIAL GAAS AND IN SI [J].

WILSON, RG ;

VASUDEV, PK ;

JAMBA, DM ;

EVANS, CA ;

DELINE, VR .

APPLIED PHYSICS LETTERS, 1980, 36 (03) :215-217

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