DIAMOND DEPOSITION ON STEEL WITH CVD TUNGSTEN INTERMEDIATE LAYER

被引:181
作者
RALCHENKO, VG [1 ]
SMOLIN, AA [1 ]
PEREVERZEV, VG [1 ]
OBRAZTSOVA, ED [1 ]
KOROTOUSHENKO, KG [1 ]
KONOV, VI [1 ]
LAKHOTKIN, YV [1 ]
LOUBNIN, EN [1 ]
机构
[1] RUSSIAN ACAD SCI,INST PHYS CHEM,MOSCOW 117915,RUSSIA
关键词
BUFFER LAYER; DC PLASMA CVD; STRESS; ADHESION;
D O I
10.1016/0925-9635(94)05299-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Diamond deposition on steel with enhanced adhesion has been performed by using a CVD tungsten intermediate layer between substrate and diamond as a diffusion barrier for iron and carbon. The tungsten buffer layers of 15-45 mu m thickness with highly faceted surface relief have been grown on #R18 steel (79% Fe, 17% W, 4% Cr) by the CVD process from tungsten hexafluoride in a ''hot-wall'' reactor. This technique is suitable for large-scale production with deposition rate up to a few millimeters per hour over a large area. The diamond films were grown in a d.c. are discharge in 5%CH4/H-2 mixture. The samples characterized by X-ray diffraction, Auger electron spectroscopy and cross-section examination revealed a tri-layer coating structure: diamond/tungsten carbide/tungsten. The carbide layer, consisting mainly of WC phase with a small fraction of W2C phase, provides good adhesion, as confirmed by Rockwell indentation tests. As determined from Raman spectra, the films were under high compressive stress, sigma approximate to 7 GPa, originating from the large mismatch in thermal expansion coefficients of steel and diamond. Yet the adhesion accommodates the stress without film delamination.
引用
收藏
页码:754 / 758
页数:5
相关论文
共 16 条
[1]   QUANTITATIVE MEASUREMENT OF RESIDUAL BIAXIAL STRESS BY RAMAN-SPECTROSCOPY IN DIAMOND GROWN ON A TI ALLOY BY CHEMICAL-VAPOR-DEPOSITION [J].
AGER, JW ;
DRORY, MD .
PHYSICAL REVIEW B, 1993, 48 (04) :2601-2607
[2]   INVESTIGATION OF DIAMOND THIN-FILM GROWTH ON FERROUS SURFACES [J].
AHN, J ;
TAN, FH ;
TAN, HS .
DIAMOND AND RELATED MATERIALS, 1993, 2 (2-4) :353-356
[3]  
CHAPLIEV NI, 1991, APPLICATIONS DIAMOND, P417
[4]   DIAMOND SYNTHESIS ON A METAL-SUBSTRATE [J].
KAWARADA, M ;
KURIHARA, K ;
SASAKI, K .
DIAMOND AND RELATED MATERIALS, 1993, 2 (5-7) :1083-1089
[5]  
KIKOIN IK, 1976, TABLES PHYSICAL VALU, P122
[6]   YOUNGS MODULUS AND POISSONS RATIO OF CVD DIAMOND [J].
KLEIN, CA ;
CARDINALE, GF .
DIAMOND AND RELATED MATERIALS, 1993, 2 (5-7) :918-923
[7]   LARGE-AREA DIAMOND DEPOSITION AND BRAZING OF THE DIAMOND FILMS ON STEEL SUBSTRATES FOR TRIBOLOGICAL APPLICATIONS [J].
KOHZAKI, M ;
HIGUCHI, K ;
NODA, S ;
UCHIDA, K .
DIAMOND AND RELATED MATERIALS, 1993, 2 (5-7) :612-616
[8]  
Lakhotkin Yu. V., 1989, TUNGSTEN RHENIUM COA
[9]  
LAKHOTKIN YV, 1991, 120TH P ANN M MIN ME, P347
[10]  
Lindlbauer A., 1992, DIAMOND FILMS TECHNO, V2, P81