MODEL OF THE COMPETITIVE GROWTH OF AMORPHOUS-CARBON AND DIAMOND FILMS

被引：10

作者：

FORD, IJ ^{[1
]}

机构：

[1] AEA TECHNOL,HARWELL LAB,DIDCOT OX11 0RA,OXON,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 01期

关键词：

D O I：

10.1063/1.360634

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Recent experiments by D. S. Olson, M. A. Kelly, S. Kapoor, and S. B. Hagstrom [J. Appl. Phys. 74, 5167 (1993)] have demonstrated that depending on the ratio of the fluxes of carbon and atomic hydrogen onto a substrate in a chemical vapor deposition reactor, either an amorphous carbon deposit, or a crystalline diamond film, may be produced. A simple interpretation of these findings is proposed, based on a set of phenomenological rate equations for various growth and etching processes. The model is simple enough to admit analytical solutions in certain circumstances, which may provide insights into the optimisation of carbon film deposition methods. © 1995 American Institute of Physics.

引用

页码：510 / 513

页数：4

共 21 条

[1] LOW-PRESSURE, METASTABLE GROWTH OF DIAMOND AND DIAMONDLIKE PHASES [J].