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SEMI-INSULATING POLYCRYSTALLINE-SILICON (SIPOS) PASSIVATION TECHNOLOGY
被引:83
作者
:
MATSUSHITA, T
论文数:
0
引用数:
0
h-index:
0
机构:
SONY CORP,DIV SEMICOND DEV,ATSUGI 243,JAPAN
MATSUSHITA, T
AOKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
SONY CORP,DIV SEMICOND DEV,ATSUGI 243,JAPAN
AOKI, T
OTSU, T
论文数:
0
引用数:
0
h-index:
0
机构:
SONY CORP,DIV SEMICOND DEV,ATSUGI 243,JAPAN
OTSU, T
YAMOTO, H
论文数:
0
引用数:
0
h-index:
0
机构:
SONY CORP,DIV SEMICOND DEV,ATSUGI 243,JAPAN
YAMOTO, H
HAYASHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
SONY CORP,DIV SEMICOND DEV,ATSUGI 243,JAPAN
HAYASHI, H
OKAYAMA, M
论文数:
0
引用数:
0
h-index:
0
机构:
SONY CORP,DIV SEMICOND DEV,ATSUGI 243,JAPAN
OKAYAMA, M
KAWANA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
SONY CORP,DIV SEMICOND DEV,ATSUGI 243,JAPAN
KAWANA, Y
机构
:
[1]
SONY CORP,DIV SEMICOND DEV,ATSUGI 243,JAPAN
[2]
SONY CORP,DIV SEMICOND,ATSUGI 243,JAPAN
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS
|
1976年
/ 15卷
关键词
:
D O I
:
10.7567/JJAPS.15S1.35
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:35 / 40
页数:6
相关论文
共 5 条
[1]
Aoki T., 1975, Electrochemical Society Spring Meeting. (Extended abstracts), P352
[2]
KAJIWARA Y, 1974, ECS741 EXT ABSTR, P64
[3]
MATSUSHITA T, 1974, J JAPAN SOC APPL PHY, V43, P395
[4]
MOCHIZUKI M, 1976, J JAPAN SOC APPL P S, V15, P41
[5]
DESIGN CONSIDERATIONS FOR HIGH-VOLTAGE OVERLAY ANNULAR DIODES
ZOROGLU, DS
论文数:
0
引用数:
0
h-index:
0
ZOROGLU, DS
CLARK, LE
论文数:
0
引用数:
0
h-index:
0
CLARK, LE
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1972,
ED19
(01)
: 4
-
+
←
1
→
共 5 条
[1]
Aoki T., 1975, Electrochemical Society Spring Meeting. (Extended abstracts), P352
[2]
KAJIWARA Y, 1974, ECS741 EXT ABSTR, P64
[3]
MATSUSHITA T, 1974, J JAPAN SOC APPL PHY, V43, P395
[4]
MOCHIZUKI M, 1976, J JAPAN SOC APPL P S, V15, P41
[5]
DESIGN CONSIDERATIONS FOR HIGH-VOLTAGE OVERLAY ANNULAR DIODES
ZOROGLU, DS
论文数:
0
引用数:
0
h-index:
0
ZOROGLU, DS
CLARK, LE
论文数:
0
引用数:
0
h-index:
0
CLARK, LE
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1972,
ED19
(01)
: 4
-
+
←
1
→