PHASE-TRANSITIONS AND ELECTRICAL-PROPERTIES OF AS2TE3

被引：30

作者：

PLATAKIS, NS ^{[1
]}

机构：

[1] IBM CORP,RES CTR,SAN JOSE,CA 95193

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1977年 / 24卷 / 03期

关键词：

D O I：

10.1016/0022-3093(77)90105-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：365 / 376

页数：12

共 35 条

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Fritzsche H., 1970, Journal of Non-Crystalline Solids, V2, P148, DOI 10.1016/0022-3093(70)90130-4

[14]

Grant A. J., 1974, 5th International Conference on amorphous and liquid semiconductors, Vol.I, P325

[15]

Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[16]

HILSUM C, 1961, SEMICONDUCTING 2 5 C, P137

[17] GLASSY SEMICONDUCTING AS2TE3 [J].

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STOURAC, L .

MATERIALS RESEARCH BULLETIN, 1971, 6 (06) :465-&

[18] ELECTRICAL AND STRUCTURAL-PROPERTIES OF ANNEALED AS-TE AND AS-TE-I SEMICONDUCTING GLASSES - SURFACE AND BULK EFFECTS [J].

JOHNSON, RT ;

QUINN, RK ;

BORDERS, JA .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1974, 15 (02) :289-309

[19]

MAIN C, 1974, 5TH P INT C AM LIQ S, P783

[20] HEATS OF FUSION OF A2B3 COMPOUNDS AS2S3, AS2SE3, AS2TE3, AND SB2S3 [J].

MYERS, MB ;

FELTY, EJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (06) :818-&

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