INFLUENCE OF PRESSURE ON MOBILITY IN HEAVILY DOPED N-TYPE INDIUM ANTIMONIDE

被引：21

作者：

LITWINST.E

POROWSKI, S

FILIPCHENKO, AA

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1971年 / 48卷 / 02期

关键词：

D O I：

10.1002/pssb.2220480208

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：519 / +

页数：1

共 8 条

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[4]

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[6] EFFECT OF PRESSURE ON THE ELECTRICAL PROPERTIES OF INDIUM ANTIMONIDE [J].

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[7] ELECTRON SCATTERING AND TRANSPORT PHENOMENA IN N-INSB [J].

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[8] ELASTIC ELECTRON SCATTERING IN INSB-TYPE SEMICONDUCTORS [J].

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SZYMANSKA, W .

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