SCATTERING ON SHORT-RANGE POTENTIALS IN INSB

被引:18
作者
LITWINST.E
POROWSKI, S
FILIPCHENKO, AA
机构
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1971年 / 48卷 / 02期
关键词
D O I
10.1002/pssb.2220480209
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:525 / +
页数:1
相关论文
共 13 条
[1]  
DUBROVSKAYA J, 1970, FIZ TEKH POLUPROV, V4, P2201
[2]   NEUTRAL IMPURITY SCATTERING IN SEMICONDUCTORS [J].
ERGINSOY, C .
PHYSICAL REVIEW, 1950, 79 (06) :1013-1014
[3]   TUNNELING PROBABILITY IN GERMANIUM P-N JUNCTIONS [J].
FURUKAWA, Y .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (04) :730-730
[4]  
JEDRZEJCZAK A, TO BE PUBLISHED
[5]   BAND STRUCTURE OF INDIUM ANTIMONIDE [J].
KANE, EO .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) :249-261
[6]  
KORENBLIT L, 1969, FIZ TEKH POLUPROV, V3, P1528
[7]   INFLUENCE OF PRESSURE ON MOBILITY IN HEAVILY DOPED N-TYPE INDIUM ANTIMONIDE [J].
LITWINST.E ;
POROWSKI, S ;
FILIPCHENKO, AA .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1971, 48 (02) :519-+
[8]   ELECTRON MOBILITIES AND TUNNELING CURRENTS IN SILICON [J].
LOGAN, RA ;
TRUMBORE, FA ;
GILBERT, JF .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) :131-&
[9]   SCATTERING OF CHARGE CARRIERS FROM POINT IMPERFECTIONS IN SEMICONDUCTORS [J].
MORIMOTO, T ;
TANI, K .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (07) :1121-&
[10]   IONIZED IMPURITY SCATTERING IN NONDEGENERATE SEMICONDUCTORS [J].
SCLAR, N .
PHYSICAL REVIEW, 1956, 104 (06) :1548-1558