IONIZED IMPURITY SCATTERING IN NONDEGENERATE SEMICONDUCTORS

被引:102
作者
SCLAR, N
机构
来源
PHYSICAL REVIEW | 1956年 / 104卷 / 06期
关键词
D O I
10.1103/PhysRev.104.1548
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1548 / 1558
页数:11
相关论文
共 16 条
[1]   DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J].
BARDEEN, J ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1950, 80 (01) :72-80
[2]  
BROOKS H, 1951, PHYS REV, V83, P879
[3]   THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS [J].
CONWELL, E ;
WEISSKOPF, VF .
PHYSICAL REVIEW, 1950, 77 (03) :388-390
[4]   ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J].
DEBYE, PP ;
CONWELL, EM .
PHYSICAL REVIEW, 1954, 93 (04) :693-706
[5]   EFFECTS OF DISLOCATIONS ON MOBILITIES IN SEMICONDUCTORS [J].
DEXTER, DL ;
SEITZ, F .
PHYSICAL REVIEW, 1952, 86 (06) :964-965
[6]  
DINGLE RB, 1955, PHILOS MAG, V46, P831
[7]   NEUTRAL IMPURITY SCATTERING IN SEMICONDUCTORS [J].
ERGINSOY, C .
PHYSICAL REVIEW, 1950, 79 (06) :1013-1014
[8]  
FOWLER RH, 1936, STATISTICAL MECHANIC, P269
[9]   ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J].
FRITZSCHE, H .
PHYSICAL REVIEW, 1955, 99 (02) :406-419
[10]   ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J].
MORIN, FJ ;
MAITA, JP .
PHYSICAL REVIEW, 1954, 96 (01) :28-35