LARGE PICOSECOND ENERGY FLUCTUATIONS OF SINGLE ATOMS OF A-SI OBSERVED IN MOLECULAR-DYNAMICS STUDIES

被引：13

作者：

KHAIT, YL ^{[1
]}

SILVERMAN, A ^{[1
]}

WEIL, R ^{[1
]}

ADLER, J ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-32000 HAIFA,ISRAEL

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.44.8308

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Molecular-dynamics simulations on samples of pure and fluorine-doped amorphous silicon in various temperature ranges are described. These reveal large transient coordinate fluctuations of single atoms in solids. The observation of these fluctuations supports kinetic theories based on the existence of short-lived large energy fluctuations (SLEF's) of single atoms in solids at finite temperatures. The characteristic energies, time intervals, and frequencies of the observed SLEF's are in good qualitative agreement with the SLEF theory predictions.

引用

页码：8308 / 8311

页数：4

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