CARBON AND HYDROGEN INCORPORATION IN ZNTE LAYERS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：4

作者：

DUMONT, H

SVOB, L

BALLUTAUD, D

GOROCHOV, O

机构：

[1] Laboratoire de Physique des Solides de Bellevue, Meudon Cedex, 92195, 1, place Aristide Briand

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1994年 / 23卷 / 02期

关键词：

CARBON AND H-2 INCORPORATION; ZNTE; METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD);

D O I：

10.1007/BF02655276

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The metalorganic chemical vapor deposition growth of ZnTe has been performed at atmospheric pressure under helium and hydrogen carrier gases. Epitaxial growth was achieved on GaAs (100) substrates with the combination of diethylzinc and diethyltellurium as precursors. We have studied the incorporation of carbon and hydrogen in as-grown layers of ZnTe by secondary ion mass spectroscopy analysis and out-diffusion experiments with different carrier gases and growth temperatures. The amount of carbon and hydrogen incorporated in the ZnTe layers greatly depends on the nature of the gas considered. Under helium atmosphere, the amount of carbon and hydrogen incorporated are greater than under H-2 with an origin from organometallic precursors.

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页码：239 / 242

页数：4

相关论文

共 11 条

[1] NEUTRALIZATION OF DEFECTS AND DOPANTS IN III-V SEMICONDUCTORS [J].

CHEVALLIER, J ;

CLERJAUD, B ;

PAJOT, B .

SEMICONDUCTORS AND SEMIMETALS, 1991, 34 (0C) :447-510

[2] MASS-SPECTROMETRIC STUDY OF THERMAL-DECOMPOSITION OF DIETHYLZINC AND DIETHYLTELLURIUM [J].

DUMONT, H ;

MARBEUF, A ;

BOUREE, JE ;

GOROCHOV, O .

JOURNAL OF MATERIALS CHEMISTRY, 1992, 2 (09) :923-930

[3] ANTIMONY DOPING OF ZNTE GROWN BY MOLECULAR-BEAM EPITAXY [J].

FELDMAN, RD ;

AUSTIN, RF ;

SHER, A ;

SCHNOES, ML ;

DOWNEY, SW ;

EMERSON, AB ;

HARRIS, TD ;

SPITZER, RC ;

GUALTIERI, GJ ;

SCHWARTZ, GP .

JOURNAL OF CRYSTAL GROWTH, 1992, 118 (3-4) :295-298

[4] INVESTIGATION OF CARBON INCORPORATION IN ZNSE - EFFECTS ON MORPHOLOGY, ELECTRICAL, AND PHOTOLUMINESCENCE PROPERTIES [J].

GIAPIS, KP ;

JENSEN, KF ;

POTTS, JE ;

PACHUTA, SJ .

JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (05) :453-462

[5] INTRINSIC CARBON INCORPORATION IN VERY HIGH-PURITY MOVPE GAAS [J].

HANNA, MC ;

LU, ZH ;

OH, EG ;

MAO, E ;

MAJERFELD, A .

JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) :443-448

[6] SIMULATION OF CARBON DOPING OF GAAS DURING MOVPE [J].

MASI, M ;

SIMKA, H ;

JENSEN, KF ;

KUECH, TF ;

POTEMSKI, R .

JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) :483-492

[7] GAS-PHASE AND SURFACE-REACTION MECHANISMS IN MOCVD OF GAAS WITH TRIMETHYL-GALLIUM AND ARSINE [J].

MOUNTZIARIS, TJ ;

JENSEN, KF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (08) :2426-2439

[8] HYDROGENATION OF WIDE-BAND-GAP II-VI SEMICONDUCTORS [J].

PONG, C ;

JOHNSON, NM ;

STREET, RA ;

WALKER, J ;

FEIGELSON, RS ;

DEMATTEI, RC .

APPLIED PHYSICS LETTERS, 1992, 61 (25) :3026-3028

[9] INCORPORATION OF HYDROGEN IN CDTE AND HGTE EPITAXIAL LAYERS GROWN BY MOCVD [J].

SVOB, L ;

MARFAING, Y ;

DESJONQUERES, F ;

DRUILHE, R .

PHYSICA B, 1991, 170 (1-4) :550-552

[10] CARBON ACCEPTOR INCORPORATION IN GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION - ARSINE VERSUS TERTIARYBUTYLARSINE [J].

WATKINS, SP ;

HAACKE, G .

APPLIED PHYSICS LETTERS, 1991, 59 (18) :2263-2265