A CMOS TIME TO DIGITAL CONVERTER IC WITH 2-LEVEL ANALOG CAM

被引:16
作者
GERDS, EJ
VANDERSPIEGEL, J
VANBERG, R
WILLIAMS, HH
CALLEWAERT, L
EYCKMANS, W
SANSEN, W
机构
[1] UNIV PENN,DEPT PHYS,PHILADELPHIA,PA 19104
[2] CATHOLIC UNIV LEUVEN,B-3000 LOUVAIN,BELGIUM
关键词
D O I
10.1109/4.309902
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A time to charge converter IC with an analog memory unit (TCCAMU) has been designed and fabricated in HP's CMOS 1.2-mum n-well process. The TCCAMU is an event driven system designed for front end data acquisition in high energy physics experiments. The chip includes a time to charge converter, analog Level 1 and Level 2 associative memories for input pipelining and data filtering, and an A/D converter. The intervals measured and digitized range from 8-24 ns. Testing of the fabricated chip resulted in an LSB width of 107 ps, a typical differential nonlinearity of < 35 ps, and a typical integral nonlinearity of < 200 ps. The average power dissipation is 8.28 mW per channel. By counting the reference clock, a time resolution of 107 ps over approximately 1 s range could be realized.
引用
收藏
页码:1068 / 1076
页数:9
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