INTEGRATION OF WAVE-GUIDES AND PHOTODETECTORS IN SIGE FOR 1.3 MU-M OPERATION

被引：65

作者：

SPLETT, A ^{[1
]}

ZINKE, T ^{[1
]}

PETERMANN, K ^{[1
]}

KASPER, E ^{[1
]}

KIBBEL, H ^{[1
]}

HERZOG, HJ ^{[1
]}

PRESTING, H ^{[1
]}

机构：

[1] DAIMLER BENZ FORSCHUNGSINST,D-89081 ULM,GERMANY

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 01期

关键词：

D O I：

10.1109/68.265889

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The integration of single-mode rib waveguides and photodetectors in silicon using MBE-grown SiGe-layers is reported. Short photodetectors exhibit dark currents below 200 nA at 7 V reverse bias. For the fiber-waveguide-detector coupling an overall quantum efficiency of 11% has been achieved at 7 V reverse bias for lambda = 1.3 mum. The maximum bandwidth is 2 GHz.

引用

页码：59 / 61

页数：3

共 8 条

[1] FISCHER U, 1993, UNPUB PHOTONICS TECH
[2] JALALI B, 1992, ELECTRON LETT, V28, P369
[3] Kesan V. P., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P637, DOI 10.1109/IEDM.1990.237118
[4] RICHARD A, 1986, IEEE J QUANTUM ELECT, V22, P873
[5] SCHUPPERT B, 1994, J LIGHTWAVE TECHNOLO
[6] SPLETT A, 1993, OFC IOOC TECHNICAL D, V4, P116
[7] SPLETT A, 1992, INTEGRATED PHOTONICS, V10, P122
[8] GEXSI1-X STRAINED-LAYER SUPERLATTICE WAVE-GUIDE PHOTODETECTORS OPERATING NEAR 1.3 MU-M
TEMKIN, H
PEARSALL, TP
BEAN, JC
LOGAN, RA
LURYI, S
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (15) : 963 - 965

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