HOT PLASMA BOX GLOW-DISCHARGE DEPOSITION OF A-SI1-X-CX-H ALLOYS

被引：6

作者：

BHUSARI, DM

KSHIRSAGAR, ST

机构：

[1] National Chemical Laboratory, Pune

来源：

MATERIALS LETTERS | 1991年 / 11卷 / 10-12期

关键词：

D O I：

10.1016/0167-577X(91)90131-O

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Various physical properties of a-Si1-x:C(x):H alloy films grown with high deposition rates in a hot plasma box (HPB) glow discharge reactor are reported. The electronic quality of these alloys has been found to be equally good as that of alloys grown with low deposition rates in conventional open parallel plate glow discharge reactors.

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页码：348 / 351

页数：4

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