FREQUENCY STABILIZATION OF LASER-DIODES USING 1.51-1.55 MU-M ABSORPTION-LINES OF (C2H2)-C-12 AND (C2H2)-C-13

被引:48
作者
SAKAI, Y [1 ]
SUDO, S [1 ]
IKEGAMI, T [1 ]
机构
[1] NIPPON TELEGRAPH & TEL PUBL CORP, OPTOELECTR LABS, TOKAI, IBARAKI 31911, JAPAN
关键词
D O I
10.1109/3.119500
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Frequency stabilization of a 1.5-mu-m DFB laser diode is demonstrated using vibrational-rotational absorption of (C2H2)-C-12 and (C2H2)-C-13 molecules (named VRAM). Frequency stability within 2 MHz peak to peak fluctuation can be achieved in the wavelength region of 1.51-1.55-mu-m. Frequency-stabilized DFB laser compact modules have been constructed. Frequency stabilities are evaluated by measuring the beat spectrum of the two lasers. In addition, the temperature and pressure dependences of the acetylene absorption lines are characterized.
引用
收藏
页码:75 / 81
页数:7
相关论文
共 25 条
[21]   FREQUENCY LOCKING OF AN INGAASP SEMICONDUCTOR-LASER TO THE 1ST OVERTONE VIBRATION-ROTATION LINES OF HYDROGEN-FLUORIDE [J].
YAMAGUCHI, S ;
SUZUKI, M .
APPLIED PHYSICS LETTERS, 1982, 41 (11) :1034-1036
[22]   SIMULTANEOUS STABILIZATION OF THE FREQUENCY AND POWER OF AN ALGAAS SEMICONDUCTOR-LASER BY USE OF THE OPTOGALVANIC EFFECT OF KRYPTON [J].
YAMAGUCHI, S ;
SUZUKI, M .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (10) :1514-1519
[23]  
YAMAZAKI H, 1990, OFC 90
[24]   FREQUENCY STABILIZATION OF 1.5-MU-M INGAASP DISTRIBUTED FEEDBACK LASER TO NH3 ABSORPTION-LINES [J].
YANAGAWA, T ;
SAITO, S ;
YAMAMOTO, Y .
APPLIED PHYSICS LETTERS, 1984, 45 (08) :826-828
[25]  
1989, GUIDE BOOK TECHNICAL, P17