A 512-KB FLASH EEPROM EMBEDDED IN A 32-B MICROCONTROLLER

被引：9

作者：

KUO, C ^{[1
]}

WEIDNER, M ^{[1
]}

TOMS, T ^{[1
]}

CHOE, H ^{[1
]}

CHANG, KM ^{[1
]}

HARWOOD, A ^{[1
]}

JELEMENSKY, J ^{[1
]}

SMITH, P ^{[1
]}

机构：

[1] MOTOROLA INC,ADV PROD RES & DEV LAB,MICROCONTROLLER & MEMORY TECHNOL GRP,AUSTIN,TX 78735

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1992年 / 27卷 / 04期

关键词：

Amplifiers--Applications; -; Computers; Microcomputer - Integrated Circuits--Design - Semiconductor Diodes; Zener--Applications;

D O I：

10.1109/4.126546

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 512-kb flash EEPROM developed for microcontroller applications will be reported. Many process and performance constraints associated with the conventional flash EEPROM have been eliminated through the development of a new flash EEPROM cell and new circuit techniques. Design of the 512-kb flash EEPROM, which is programmable for different array sizes, has been evaluated from 256- and 384-kb arrays embedded in new 32-b microcontrollers. The 512-kb flash EEPROM has incorporated the newly developed source-coupled split-gate (SCSG) flash EEPROM cell, Zener-diode controlled programming voltages, internally generated erase voltage, and a new differential sense amplifier. It has eliminated overerase and program disturb problems without relying on tight process controls and on critical operational sequences and timings, such as intelligent erase, intelligent program, and pre-program before erase. A modular approach was used for chip design to minimize development time and for processing technology to achieve high manufacturability and flexibility.

引用

页码：574 / 582

页数：9

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