ULTRASENSITIVE-HOT-ELECTRON MICROBOLOMETER

被引:171
作者
NAHUM, M
MARTINIS, JM
机构
[1] National Institute of Standards and Technology, Boulder, CO
关键词
D O I
10.1063/1.110237
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present measurements on a novel power detector which can be used as an ultrasensitive detector of millimeter and submillimeter radiation. The absorbing element consists of a thin film resistor strip which is connected to superconducting electrodes. This device exploits the Andreev reflection of electrons and the weak electron-phonon coupling at low temperatures to produce a large temperature rise for a small input power (almost-equal-to 10 mK/fW). The temperature rise of the electrons is detected by a tunnel junction where par-t of the metal strip forms the normal electrode. We have measured a voltage responsivity of approximately 10(9) V/W and an amplifier-limited electrical noise equivalent power almost-equal-to 3 X 10(-18) WHz-1/2 at an operating temperature of 100 mK. If infrared radiation were efficiently coupled to the absorbing element with an antenna or a waveguide, then the sensitivity of this detector would be at least a factor of 10 better than the best available direct detector operating at the same temperature.
引用
收藏
页码:3075 / 3077
页数:3
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