METAL-OXIDE-SEMICONDUCTOR CHARACTERISTICS OF RAPID THERMAL NITRIDED THIN OXIDES

被引：22

作者：

SHIH, DK ^{[1
]}

CHANG, WT ^{[1
]}

LEE, SK ^{[1
]}

KU, YH ^{[1
]}

KWONG, DL ^{[1
]}

LEE, S ^{[1
]}

机构：

[1] NCR CORP,COLORADO SPRINGS,CO 80916

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 20期

关键词：

D O I：

10.1063/1.99710

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1698 / 1700

页数：3

共 16 条

[1]

CHANG S, 1984, APPL PHYS LETT, V44, P317

[2] VISCOUS SHEAR-FLOW MODEL FOR MOS DEVICE RADIATION SENSITIVITY [J].

EERNISSE, EP ;

DERBENWICK, GF .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1534-1539

[3]

Ekstedt T. W., 1983, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 83, P189

[4]

FISCHETTI MV, 1985, J APPL PHYS, V57, P2855

[5]

GINOLD H, 1982, IEDM, P43

[6] THERMAL NITRIDATION OF SILICON IN ADVANCED LSI PROCESSING [J].

ITO, T ;

ISHIKAWA, H ;

FUKUKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) :33-38

[7] AMMONIA-ANNEALED SIO2-FILMS FOR THIN-GATE INSULATOR [J].

KATO, I ;

ITO, T ;

INOUE, SI ;

NAKAMURA, T ;

ISHIKAWA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) :153-158

[8]

LAI SK, 1982, J ELECTROCHEM SOC, V129, P2043

[9] THERMAL NITRIDATION OF SI AND SIO2 FOR VLSI [J].

MOSLEHI, MM ;

SARASWAT, KC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :106-123

[10]

MOSLEHI MM, 1986, SEMICOND SILICON, V86, P379

← 1 2 →