THE FORWARD BIASED, ABRUPT P-N-JUNCTION

被引：1

作者：

GUCKEL, H ^{[1
]}

DEMIRKOL, A ^{[1
]}

THOMAS, D ^{[1
]}

IYENGAR, S ^{[1
]}

机构：

[1] HEWLETT PACKARD CO, PALO ALTO, CA 94304 USA

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 02期

关键词：

D O I：

10.1016/0038-1101(82)90039-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：105 / 113

页数：9

共 32 条

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[8]

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[9] TRANSITION REGION BEHAVIOR IN ABRUPT, FORWARD-BIASED PN-JUNCTIONS [J].

GUCKEL, H ;

THOMAS, DC ;

IYENGAR, SV ;

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[10]

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