TIME-OF-FLIGHT MEASUREMENT FOR ELECTRON VELOCITY IN P-ALGAAS/GAAS/ALGAAS AT A HIGH-FIELD

被引：6

作者：

FURUTA, T

SHIGEKAWA, N

MIZUTANI, T

YOSHII, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 22期

关键词：

D O I：

10.1063/1.102047

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2310 / 2312

页数：3

共 8 条

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[2]

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[7] REAL-SPACE ELECTRON-TRANSFER BY THERMIONIC EMISSION IN GAAS-ALXGA1-XAS HETEROSTRUCTURES - ANALYTICAL MODEL FOR LARGE LAYER WIDTHS [J].

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[8]

Yoshii A., 1986, Process and device modeling, P195

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