SINGLE-ELECTRON CHARGING EFFECTS IN INSULATING WIRES

被引：41

作者：

CHANDRASEKHAR, V ^{[1
]}

OVADYAHU, Z ^{[1
]}

WEBB, RA ^{[1
]}

机构：

[1] HEBREW UNIV JERUSALEM,RACAH INST PHYS,IL-91904 JERUSALEM,ISRAEL

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 67卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.67.2862

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present measurements of the transport properties of 0.75-mu-m-long, narrow, insulating indium oxide wires and rings. These devices have no apparent tunnel barriers, yet they exhibit effects similar to those found in series arrays of very-small-capacitance tunnel junctions: highly nonlinear I-V characteristics and a zero-bias conductance which is periodic in a voltage applied by means of a lateral gate. These effects are due to the influence of single-electron charging on transport through localized states in the insulating regime.

引用

页码：2862 / 2865

页数：4

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