INTERFACE STUDIES OF MOS-STRUCTURE BY TRANSFER-ADMITTANCE MEASUREMENTS

被引：8

作者：

KOOMEN, J ^{[1
]}

机构：

[1] TWENTE UNIV TECHNOL,ENSCHEDE,NETHERLANDS

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 04期

关键词：

D O I：

10.1016/0038-1101(74)90123-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：321 / 328

页数：8

共 21 条

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[9] INVESTIGATION OF MOST CHANNEL CONDUCTANCE IN WEAK INVERSION [J].

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[10] IMPEDANCE OF SEMICONDUCTOR-INSULATOR-METAL CAPACITORS [J].

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