IN-SITU ETCHING AND REGROWTH PROCESS FOR EDGE-EMITTING AND SURFACE-EMITTING LASER-DIODES WITH AN ALGAAS/GAAS BURIED HETEROSTRUCTURE

被引：6

作者：

OGURA, M

机构：

[1] Electrotechnical Lab, Tsukuba

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 04期

关键词：

D O I：

10.1116/1.588182

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An in situ dry etching and metalorganic chemical-vapor deposition regrowth process is developed to realize AlGaAs/GaAs buried heterostructure with an arbitrary shape and orientation, and is applied to edge-emitting laser diodes with a complex cavity structure and surface-emitting laser diodes (SELD). At present, threshold currents for both edge-emitting and surface-emitting lasers are similar to that of a conventional ridge-stripe waveguide laser or proton-isolated SELD, indicating that there is considerable surface recombination at regrown interfaces. Surface recombination velocity at the regrown interfaces is estimated from the size effect of lasing characteristics. (C) 1995 American Vacuum Society.

引用

页码：1529 / 1535

页数：7

共 8 条

[1]

ASADA M, 1985, IEEE J QUANTUM ELECT, V21, P431

[2] VERTICAL-CAVITY SURFACE-EMITTING LASER-DIODES FABRICATED BY INSITU DRY ETCHING AND MOLECULAR-BEAM EPITAXIAL REGROWTH [J].