AIGAAS/GAAS BURIED QUANTUM-WELL LASER-DIODES BY ONE-TIME SELECTIVE METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH ON DIELECTRIC WINDOW STRIPES

被引：4

作者：

OGURA, M

CHEN, ZY

KANEKO, H

FUJII, S

ITOH, H

MORI, M

WATANABE, M

MUKAI, S

YAJIMA, H

机构：

[1] Electrotechnical Laboratory, Tsukuba

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 26期

关键词：

D O I：

10.1063/1.109621

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlGaAs graded-index separate-confinement heterostructure lasers with lateral mode confinement are realized by one time metalorganic chemical vapor deposition with silicon dioxide stripes as selective masks and current blocking layers. The effect of the active region width on lasing characteristics is investigated. The threshold current and external quantum efficiency are around 12 mA and 70%, respectively, for narrow lasers. Elevated waveguide structure formed by the growth-rate difference between (100) and sidewall planes was effective for stable lateral mode characteristics.

引用

页码：3417 / 3419

页数：3

共 7 条

[1] FACET GROWTH OF ALGAAS ON GAAS WITH SIO2 GRATINGS BY MOCVD AND APPLICATIONS TO QUANTUM WELL WIRES [J].