VISIBLE PHOTOLUMINESCENCE FROM NANOCRYSTALLITE GE EMBEDDED IN A GLASSY SIO2 MATRIX - EVIDENCE IN SUPPORT OF THE QUANTUM-CONFINEMENT MECHANISM

被引:509
作者
MAEDA, Y [1 ]
机构
[1] KYOTO UNIV, DEPT ENERGY SCI & TECHNOL, SAKYO KU, Kyoto 6068501, JAPAN
来源
PHYSICAL REVIEW B | 1995年 / 51卷 / 03期
关键词
D O I
10.1103/PhysRevB.51.1658
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nanocrystallite Ge (nc-Ge) embedded in a glassy SiO2 matrix is fabricated and examined by x-ray photoelectron spectrometry, Raman spectrometry, and high-resolution transmission-electron microscopy. The precipitation and growth of nc-Ge are found to be related to a thermodynamical reduction of GeO2, the diffusion of Si atoms from the Si substrate into the glassy matrix, and an aggregation of small-sized nc-Ge. The size inhomogeneity can be precisely controlled by a double annealing, and the average size can be changed in the range of 2-6 nm. Broadband photoluminescence (PL) spectra are observed in the visible wavelength range at room temperature, and they exhibit pronounced blueshifts of the peak energies and broadening of the PL spectra, which can be correlated to the change in the size. The PL excitation spectra show a Stokes energy smaller than 0.1 eV and dependence on the measurement energy. The visible PL also shows a strong correlation to the presence and actual condition (i.e., size) of nc-Ge. Possible origins of the visible PL such as a quantum-confinement model in quantum dots, the presence of luminescent centers (Ge:E') in silica glass, or a structural transition of nc-Ge are discussed. The present experimental data are concluded to be more consistent with a quantum-confinement model than with the other models. © 1995 The American Physical Society.
引用
收藏
页码:1658 / 1670
页数:13
相关论文
共 26 条
  • [1] AWAZU K, 1993, J APPL PHYS, V74, P121
  • [2] Barin I., 1973, THERMOCHEMICAL PROPE
  • [3] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS
    CANHAM, LT
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1046 - 1048
  • [4] EKIMOV AI, 1982, SOV PHYS SEMICOND+, V16, P775
  • [5] GROWTH OF GE MICROCRYSTALS IN SIO2 THIN-FILM MATRICES - A RAMAN AND ELECTRON-MICROSCOPIC STUDY
    FUJII, M
    HAYASHI, S
    YAMAMOTO, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (04): : 687 - 694
  • [6] PREPARATION AND PROPERTIES OF GE MICROCRYSTALS EMBEDDED IN SIO2 GLASS-FILMS
    HAYASHI, R
    YAMAMOTO, M
    TSUNETOMO, K
    KOHNO, K
    OSAKA, Y
    NASU, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (04): : 756 - 759
  • [7] THERMAL ANNEALING OF GAS-EVAPORATED GE MICROCRYSTALS - A RAMAN AND ELECTRON-MICROSCOPIC STUDY
    HAYASHI, S
    WAKAYAMA, H
    OKADA, T
    KIM, SS
    YAMAMOTO, K
    [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1987, 56 (01) : 243 - 249
  • [8] IYER SS, 1992, MRS S P, V256
  • [9] ON THE ORIGIN OF VISIBLE PHOTOLUMINESCENCE IN NANOMETER-SIZE GE CRYSTALLITES
    KANEMITSU, Y
    UTO, H
    MASUMOTO, Y
    MAEDA, Y
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (18) : 2187 - 2189
  • [10] QUANTUM-SIZE EFFECTS OF INTERACTING ELECTRONS AND HOLES IN SEMICONDUCTOR MICROCRYSTALS WITH SPHERICAL SHAPE
    KAYANUMA, Y
    [J]. PHYSICAL REVIEW B, 1988, 38 (14): : 9797 - 9805