SI CONTAMINATION IN OPEN FLOW QUARTZ SYSTEMS FOR GROWTH OF GAAS AND GAP

In this paper, calculations are presented for the rates of contamination of liquid gallium with silicon and of flowing H//2 - HCl mixtures with volatile silicon compounds. Ideal gas behavior and local thermodynamic equilibrium are assumed. It is shown that the contact of Ga or HCl with quartz at normal growth temperatures can lead to significant silicon contamination in very dry systems. Models are presented for the formation of high concentrations of Si at the substrate-epitaxial interface and for the formation of SiO//2 precipitates in vapor growth systems. The former has previously been associated with the formation of ″I″ or insulating layers.