HIGH-TEMPERATURE NITROGEN IMPLANTATION OF TI-6AL-4V .1. MICROSTRUCTURE CHARACTERIZATION

被引:26
作者
KUSTAS, FM
MISRA, MS
WEI, R
WILBUR, PJ
KNAPP, JA
机构
[1] COLORADO STATE UNIV,FT COLLINS,CO 80523
[2] SANDIA NATL LABS,ALBUQUERQUE,NM 87185
关键词
D O I
10.1016/0257-8972(92)90221-U
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A high temperature ion implantation method, employing a high current density beam (e.g. 500-mu-A cm-2) of nitrogen ions was used to modify the near-surface microstructure of Ti-6Al-4V. A systematic study was performed with nitrogen implantation at temperatures from 400-degrees-C to more than 1000-degrees-C, and to a range of doses from (0.1-1.0) x 10(18) N2+-N2+-N+ cm-2. Microstructure characterization by Rutherford backscattering spectroscopy (RBS) and glancing incidence X-ray diffraction (GID) was performed to determine the nitrogen distribution and compound formation. RBS analysis showed enhanced nitrogen penetrations for the 800-degrees-C and 1000-degrees-C implantations compared with implantations at temperatures less than 600-degrees-C. GID indicated TiN and Ti2N concentrations were the greatest for the 800-degrees-C implantation treatment.
引用
收藏
页码:100 / 105
页数:6
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