ORIGIN OF OPTICAL ANISOTROPY IN STRAINED INXGA1-XAS/INP AND INYAL1-YAS/INP HETEROSTRUCTURES

被引：10

作者：

BENNETT, BR

DELALAMO, JA

SINN, MT

PEIRO, F

CORNET, A

ASPNES, DE

机构：

[1] MIT,CAMBRIDGE,MA 02139

[2] UNIV BARCELONA,E-08028 BARCELONA,SPAIN

[3] N CAROLINA STATE UNIV,RALEIGH,NC 27695

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1994年 / 23卷 / 04期

关键词：

ELLIPSOMETRY; HETEROSTRUCTURE; INP; OPTICAL ANISOTROPY (OA); REFLECTANCE DIFFERENCE SPECTROSCOPY;

D O I：

10.1007/BF02671224

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optical anisotropy in mismatched InxGa1-xAs/InP and InyAl1-yAs/InP heterostructures has been investigated by variable azimuthal angle ellipsometry and reflectance difference spectroscopy. The two approaches are shown to yield strongly correlated results. A comparison to high resolution x-ray diffraction, transmission electron microscopy, and atomic force microscopy studies indicates that large optical anisotropies are associated with surface roughening that results from three-dimensional growth. Our findings demonstrate that fast and nondestructive measurements of optical anisotropy can provide important information about the growth mode and crystalline quality of strained epitaxial layers.

引用

页码：423 / 429

页数：7

共 34 条

[1] INSITU CHARACTERIZATION BY REFLECTANCE DIFFERENCE SPECTROSCOPY OF III-V MATERIALS AND HETEROJUNCTIONS GROWN BY LOW-PRESSURE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].