REMOVING NATIVE OXIDE FROM SI(001) SURFACES USING PHOTOEXCITED FLUORINE-GAS

被引:9
作者
AOYAMA, T
YAMAZAKI, T
ITO, T
机构
[1] Fujitsu Laboratories Ltd., Atsugi 243-01
关键词
D O I
10.1063/1.105930
中图分类号
O59 [应用物理学];
学科分类号
摘要
This letter discusses the reaction between (001) oriented Si surfaces and photoexcited fluorine gas resulting in the removal of the native Si oxide. For an F2/Ar gas system, the bulk Si was etched in areas where the native Si oxide had been completely removed. However, by using an F2/H-2 gas system, only the native Si oxide was removed. We used this method to remove the native Si oxide in Si epitaxial growth. A high-quality single-crystal Si film surface was obtained up to a maximum temperature of 600-degrees-C through this Si growth process. We also characterized the etching of a thermal oxide, silicon nitride, and silicon carbide.
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页码:2576 / 2578
页数:3
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