POLYCRYSTALLINE SIC FOR A WIDE-BANDGAP EMITTER OF SI-HBTS

[1] Furumura Y., 1986, Transactions of the Institute of Electronics and Communication Engineers of Japan, Part C, VJ69C, P705

[2] HETEROEPITAXIAL BETA-SIC ON SI [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (05) : 1255 - 1260

[3] HETERO-EPITAXIAL GROWTH OF CUBIC SILICON-CARBIDE ON FOREIGN SUBSTRATES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1235 - 1236

[4] MATSUNAMI H, 1987, J CRYST GROWTH, V45, P138

[5] AN AMORPHOUS SIC-H EMITTER HETEROJUNCTION BIPOLAR-TRANSISTOR [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (06) : 311 - 312

[6] SI HETEROJUNCTION BIPOLAR-TRANSISTORS WITH SINGLE-CRYSTALLINE BETA-SIC EMITTERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (10) : 2545 - 2549

[7] BETA-SIC/SI HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HIGH-CURRENT GAIN [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (02) : 87 - 89

[8] SUGII T, 1987, 1987 P S VLSI TECHN, P35

[9] UGAJIN M, 1987, 19TH C SSDM, P339

[10] YAMAZAKI T, 1987, IEDM TECH DIG, P586

[1] Furumura Y., 1986, Transactions of the Institute of Electronics and Communication Engineers of Japan, Part C, VJ69C, P705

[2] HETEROEPITAXIAL BETA-SIC ON SI [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (05) : 1255 - 1260

[3] HETERO-EPITAXIAL GROWTH OF CUBIC SILICON-CARBIDE ON FOREIGN SUBSTRATES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1235 - 1236

[4] MATSUNAMI H, 1987, J CRYST GROWTH, V45, P138

[5] AN AMORPHOUS SIC-H EMITTER HETEROJUNCTION BIPOLAR-TRANSISTOR [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (06) : 311 - 312

[6] SI HETEROJUNCTION BIPOLAR-TRANSISTORS WITH SINGLE-CRYSTALLINE BETA-SIC EMITTERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (10) : 2545 - 2549

[7] BETA-SIC/SI HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HIGH-CURRENT GAIN [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (02) : 87 - 89

[8] SUGII T, 1987, 1987 P S VLSI TECHN, P35

[9] UGAJIN M, 1987, 19TH C SSDM, P339

[10] YAMAZAKI T, 1987, IEDM TECH DIG, P586