BETA-SIC/SI HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HIGH-CURRENT GAIN

被引：64

作者：

SUGII, T ^{[1
]}

ITO, T ^{[1
]}

FURUMURA, Y ^{[1
]}

DOKI, M ^{[1
]}

MIENO, F ^{[1
]}

MAEDA, M ^{[1
]}

机构：

[1] FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 02期

关键词：

D O I：

10.1109/55.2049

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：87 / 89

页数：3

共 9 条

[1]

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[2]

Furumura Y., 1986, Transactions of the Institute of Electronics and Communication Engineers of Japan, Part C, VJ69C, P705

[3]

Ghannam M., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P746

[4] HETERO-EPITAXIAL GROWTH OF CUBIC SILICON-CARBIDE ON FOREIGN SUBSTRATES [J].

MATSUNAMI, H ;

NISHINO, S ;

ONO, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) :1235-1236

[5] AN AMORPHOUS SIC-H EMITTER HETEROJUNCTION BIPOLAR-TRANSISTOR [J].

SASAKI, K ;

RAHMAN, MM ;

FURUKAWA, S .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (06) :311-312

[6] MEASUREMENTS OF BANDGAP NARROWING IN SI BIPOLAR-TRANSISTORS [J].

SLOTBOOM, JW ;

DEGRAAFF, HC .

SOLID-STATE ELECTRONICS, 1976, 19 (10) :857-862

[7]

Sugii T., 1986, 1986 Symposium on VLSI Technology. Digest of Technical Papers, P45

[8]

Swirhun S. E., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P24

[9] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAP ON SI [J].

WRIGHT, SL ;

KROEMER, H ;

INADA, M .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :2916-2927

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