PLASMA EFFECT IN SILICON SEMICONDUCTOR RADIATION DETECTORS

被引：34

作者：

WILLIAMS, RN ^{[1
]}

LAWSON, EM ^{[1
]}

机构：

[1] AUSTRALIAN ATOM ENERGY COMM RES ESTAB,INSTR & CONTROL DIV,LUCAS HTS 2232,NEW S WALES,AUSTRALIA

来源：

NUCLEAR INSTRUMENTS & METHODS | 1974年 / 120卷 / 02期

关键词：

D O I：

10.1016/0029-554X(74)90044-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：261 / 268

页数：8

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