COMPARISON OF MOSSBAUER-SPECTRA OF CO-57 IN SILICON FOR HIGH-TEMPERATURE ION-IMPLANTED AND FOR DIFFUSED SAMPLES

Si samples supersaturated with radioactive 57Co, prepared by the ion‐implantation and diffusion methods, are investigated by Mössbauer spectroscopy. Nearly identical spectra are observed for high‐temperature (≈ 600 °C) implanted samples and for diffused samples quenched from 1250 °C. The spectra are decomposed into four different lines. The intensities of these lines are found to depend on the annealing of the diffused samples and the implanted dose of the ion‐implanted samples. The lines are interpreted to be due to substitutionally dissolved Co atoms (δ = 0.53 mm/s) and to metastable precipitates (lines with isomer shifts δ ≈ −0.12 mm/s, δ ≈ 0.06 mm/s, and δ ≈ 0.23 mm/s). Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA