A HIGH-CURRENT-GAIN LOW-TEMPERATURE PSEUDO-HBT UTILIZING A SIDEWALL BASE-CONTACT STRUCTURE (SICOS)

被引：17

作者：

YANO, K

NAKAZATO, K

MIYAMOTO, M

AOKI, M

SHIMOHIGASHI, K

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 10期

关键词：

D O I：

10.1109/55.43097

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：452 / 454

页数：3

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