MEASUREMENT OF PIEZOELECTRIC CONSTANT OF ZNO THIN-FILM ON SI MICROSTRUCTURE

被引：12

作者：

TANAKA, K ^{[1
]}

KUBO, R ^{[1
]}

OHWADA, K ^{[1
]}

UMEDA, A ^{[1
]}

UEDA, K ^{[1
]}

USUDA, T ^{[1
]}

机构：

[1] MINIST INT TRADE & IND, AIST, NATL RES LAB METROL, TSUKUBA, IBARAKI 305, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1995年 / 34卷 / 9B期

关键词：

PIEZOELECTRIC CONSTANT; ZNO FILM; SILICON MICROSTRUCTURE;

D O I：

10.1143/JJAP.34.5230

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The piezoelectric constant of a zinc oxide thin film on a silicon fixed beam was evaluated by a new method using a metal bar (Davies' bar) and a laser interferometer. The beam was fabricated by silicon micromachining techniques, and the ZnO film was deposited on it by rf sputtering. The film attached to the end of the Davies' bar was accelerated by striking the other end of the bar with a projectile, and the piezoelectric constant of the film was calculated from the strain and the electric charge. A reasonable value of epsilon(31)=0.43 C/m(2) was obtained for the test specimen.

引用

页码：5230 / 5232

页数：3

共 5 条

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[4]

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[5]

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